Refractory Silicon carbide rectangular beam 


Refractory Silicon carbide rectangular beam
1.Sintering Theory:
 
Reaction bonded SiC beam is made from α_SiC powder, graphite powder, mixing additives and organic adhesive agent.The mixture body is extruded and then filled into crucible with silicon powder. Sinter in a vacuum heating furnace at 1600 ~1800° C, the melt silicon powder reacts to the silicon in the body, finally from β-Sic due to the heat of reaction.
 
2. Product details:

Items	Unit	Data
Max. Service temp	ºC	1380
Density	g/cm3	3.02
Apparent Strength	%	<0.1
Bending Strength	M pa	250(20ºC)
	M pa	280(1200ºC)
Modulus of elasticity	G pa	330(20ºC)
	G pa	300(1200ºC)
Thermal conductivity	W/m.k	45(1200ºC)
Thermal explanation	K-1x10-6	4.5
Vickers-hardness	G pa	20
Acid-proof alkaline		EXCELLENT

 

 

The Bending Strength of RBSIC(SiSiC) Beams is 250MP, safety coefficient is 5.
Concentrated Loading =the Value in the Table Accordingly x 1/L,
Uniformly Distributed Loading = the Value in the Table Accordingly x 1/L。
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