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Silicon carbide RbSiC ceramics tube and pipes for structural engineering
Silicon carbide is one material of very high strength and usually made into SiSiC kiln car structure component / Silicon carbide beam / shelves with round openings. SiSiC kiln car structure component / Silicon carbide beam / shelves with round openings are lightweight and keep straight after long time working. Its maximum working temperature is up to 1380℃ or 2500℉.
Property of SiSiC kiln car structure component / Silicon carbide beam / shelves with round openings :
◊ Excellent flatness and temperature resistance up to 1380℃
◊ Superior wear resistance, impact resistance and corrosion resistance
◊ Excellent oxidation resistance
◊ Good dimensional control of complex shapes
◊ Easy installation
◊ Longer service life ( about 5 times more than that of alumina ceramic and 6 times more than that of polyurethane)
Basic Properties of Silicon Carbide Ceramics
Chemical properties
When the temperature in the oxygen reaction reaches 1300 ℃, a silicon dioxide protective layer will be formed on the surface of the silicon carbide crystal. With the thickening of the protective layer, the silicon carbide inside resisted continuing to be combined, which makes the silicon carbide has good anti-chemical property. In terms of acid, alkali, and compound resistance, silicon carbide has strong acid resistance but poor alkaline resistance because of the utility of silica protective film.
Physical properties
The density of various silicon carbide crystals is similar, which is usually 3.20 g/mm. Silicon carbide has a hardness of 9.5 Mohs, and the hardness of Knoop is 2670 - 2815 kg/mm, which is higher than that of corundum in abrasive materials, and second only to diamond, cubic boron nitride and boron carbide. The thermal conductivity and thermal shock resistance of silicon carbide ceramic are very high, and the thermal expansion parameters are small, so SiC ceramic is a high-quality refractory material.
Electrical properties
Industrial silicon carbide ceramic at constant temperature is a kind of semiconductor, which belongs to impurity conductivity. The internal resistance of high-purity silicon carbide decreases with the increase in temperature. The conductivity of silicon carbide with different impurities is also different.
