|
Density (g/cm3) |
Flexural Strength(MPa)
|
Fracture toughness K1C (M·Pam1/2) |
free Si content (%) |
Vickers microhardness |
3.09 |
326 |
4.47 |
7.76 |
25 |
(Sample by the State Building Materials Industry Industrial Ceramic Products
Quality Supervision and Testing Center for testing)
Silicon Carbide Line is currently available for the following principal application
|
|
Reaction bonded SiC is made by infiltrating compacts made of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts with the Carbon forming more SiC which bonds the initial SiC particles.
Sintered SiC is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000ºC or higher.
Both forms of Silicon Carbide (SiC) are highly wear resistant with good mechanical properties, including high temperature strength and thermal shock resistance.
Typical Silicon Carbide characteristics include:
§ Low density
§ High strength
§ Good high temperature strength (Reaction bonded)
§ Oxidation resistance (Reaction bonded)
§ Excellent thermal shock resistance
§ High hardness and wear resistance
§ Excellent chemical resistance
§ Low thermal expansion and high thermal conductivity
Typical Silicon Carbide applications include:
§ Fixed and moving turbine components
§ Seals, bearings, pump vanes
§ Ball valve parts
§ Wear plates
§ Kiln furniture
§ Heat exchangers
§ Semiconductor wafer processing equipment